TWMPD-54HS400-420W-Black Frame

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  • TWMPD-54HS400-420W-Black Frame
  • TWMPD-54HS400-420W-Black Frame

PRODUCTS DETAILS

Non-destructive battery cutting + multi-busbar/super-multi-busbar welding technology Effectively avoid the risk of micro cracks Solid bezel design Meets the load-bearing requirements of 5400Pa on the front and 2400Pa on the back Easily cope with various application scenarios Reliable structural design enables battery components to perform well in harsh environments. Cell processing methods suitable for a variety of application scenarios to ensure optimal performance and durability.
Product model
54HS400 54HS405 54HS410 54HS415 54HS420
quality assurance
Product quality assurance The 12-year warranty period makes your choice more sensible.
Power output guaranteed 25.84% output power guarantee for 8 years
Electrical Performance Parameters (STC)
Peak power (Pmax)
400 Wp 405 Wp 410 Wp 415 Wp 420 Wp
Peak Operating Voltage (Vmpp)
30.58 V 30.73 V 30.88 V 31.03 V 31.18 V
Peak Operating Current (IMPP)
13.08 A 13.18 A 13.28 A 13.38 A 13.47 A
Open circuit voltage (Voc)
37.08 V 37.23 V 37.38 V 37.53 V 37.68 V
Short circuit current (Isc)
13.77 A 13.87 A 13.92 A 13.95 A 13.98 A
Component efficiency
20.5 % 20.7 % 21 % 21.3 % 21.5 %
Power deviation (positive)
+ 1 % + 1 % + 1 % + 1 % + 1 %
Electrical Performance Parameters (NOCT)
Peak power (Pmax)
302.8 Wp 306.6 Wp 310.3 Wp 314.1 Wp 317.9 Wp
Peak Operating Voltage (Vmpp)
28.76 V 28.9 V 29.04 V 29.18 V 29.32 V
Peak Operating Current (IMPP)
10.52 A 10.6 A 10.68 A 10.76 A 10.84 A
Open circuit voltage (Voc)
34.72 V 34.86 V 35 V 35.15 V 35.29 V
Short circuit current (Isc)
10.82 A 10.9 A 10.97 A 11.05 A 11.12 A
Maximum endurance temperature 45±2 °C
Temperature characteristics
Operating temperature -40~85 °C
Temperature coefficient (Pmax) -0.34 %/°C
Temperature coefficient (Voc) -0.27 %/°C
Temperature coefficient (Isc) 0.045 %/°C
System integration parameters
Maximum system voltage 1500 V
Fuse current rating 25 A
Physical parameters
Module dimensions (height/width/thickness) 1722x1134x30 mm
weight 20.5 kg
Cell type Single crystal silicon
Number of cells 108
Glass type Anti-reflective coating, tempered
Glass thickness 3.2 mm
The border type Anodized aluminum alloy
Number of bypass diodes 3
Junction box protection rating IP 68
Cable cross-section 4 mm2

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