1.PANDA 3.0 modules use the industry's cutting-edge n-type monocrystalline TOPCon cell technology. With high quality,encapsulation materials and classic glass-backsheet structure, PANDA 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance. 2.Wide-angle invisible soldering ribbon creates high-performance and high-looking components Multi-busbar circular/triangular ribbons increase the optical utilization rate of the ribbon area from 5% to more than 40%; the "wide-angle ribbon stealth technology" based on total reflection can reduce light pollution within a certain angle range. 3.High Reliability This module also has excellent low-light performance and can maintain stable power generation output even under relatively poor lighting conditions. This is due to the application of comprehensive LID (Light Induced Degradation)/LeTID (Potential Induced Degradation) attenuation suppression technology, which effectively reduces the energy loss of components in low-light environments and further increases power generation. 4.Ultra-low LID Attenuation in the first year: 1%, annual attenuation: 0.4%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.

Product number	550	555	560	565	570	575
quality assurance
product quality assurance	12 years
Power Output Guaranteed	Degrades 0.55% per year for 25 years
Electrical performance parameters (STC)
Peak Power (Pmax)	550 Wp	555 Wp	560 Wp	565 Wp	570 Wp	575 Wp
Peak operating voltage (Vmpp)	41.57 V	41.76 V	41.94 V	42.13 V	42.29 V	42.47 V
Peak operating current (Impp)	13.24 A	13.30 A	13.36 A	13.42 A	13.48 A	13.54 A
Open circuit voltage (Voc)	50.26 V	50.46 V	50.66 V	50.86 V	51.06 V	51.26 V
Short circuit current (Isc)	13.89 A	14.07 A	14.14 A	14.20 A	14.26 A	14.32 A
Component efficiency	21.29%	21.48%	21.68%	21.87%	22.07%	22.26%
Power deviation (positive)	1.50%	1.50%	1.50%	1.50%	1.50%	1.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax)	417.85 Wp	421.67 Wp	425.39 Wp	429.24 Wp	432.80 Wp	436.57 Wp
Peak operating voltage (Vmpp)	39.58 V	39.77 V	39.94 V	40.12 V	40.27 V	40.44 V
Peak operating current (Impp)	10.56 A	10.60 A	10.65 A	10.70 A	10.75 A	10.80 A
Open circuit voltage (Voc)	47.64 V	47.83 V	48.02 V	48.21 V	48.40 V	48.59 V
Short circuit current (Isc)	11.28 A	11.34 A	11.40 A	11.45 A	11.50 A	11.55 A
maximum durable temperature	42±2 °C
temperature characteristics
Operating temperature	-40~85 °C
Temperature coefficient (Pmax)	#NAME?
Temperature Coefficient (Voc)	#NAME?
Temperature Coefficient (Isc)	0.046 %/°C
System Integration Parameters
system voltage	1000 VDC / 1500 VDC
Fuse rated current	30 A
physical parameters
Component size (height/width/thickness)	2278x1134x30 mm
weight	32.0 kg
Cell type	Monocrystalline silicon
Cell specification	144×144 mm
Cell Quantity	144
glass type	Tempering
glass thickness	3.2 mm
border type	Anodized aluminum alloy
Junction box protection class	IP 68
connector type	MC4
Cable cross section	4 mm2
cable length	1200 mm